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カルコゲナイド系非晶質半導体の研究 : 熱処理による結晶化
https://doi.org/10.24517/00011782
https://doi.org/10.24517/00011782af98834b-a1a5-4c68-b43e-3da7b94c66fb
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
AN00044309-7-2-159.pdf (195.1 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | カルコゲナイド系非晶質半導体の研究 : 熱処理による結晶化 | |||||
| タイトル | ||||||
| タイトル | Study of Amorphous Semiconductors : Due to Annealing | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ID登録 | ||||||
| ID登録 | 10.24517/00011782 | |||||
| ID登録タイプ | JaLC | |||||
| 著者 |
鈴木, 正国
× 鈴木, 正国× 坂東, 務 |
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| 著者別表示 |
Suzuki, Masakuni
× Suzuki, Masakuni× Bando, Tsutomu |
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| 書誌情報 |
金沢大学工学部紀要 = Memoirs of the Faculty of Technology Kanazawa University 巻 7, 号 2, p. 159-165, 発行日 1973-09-25 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0022-832X | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00044309 | |||||
| 出版者 | ||||||
| 出版者 | 金沢大学工学部 = Faculty of Technology Kanazawa University | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Recently, amorphous semiconductors have been remarked as the materials showing the electrical switching and memory effects. It is suggested that the disordered structures play important roles for those phenomena. Differential thermal analysis has distinguished between materials which show only ovonic switching action (threshold type) and those which show switching effect with memory action (memory type). The crystallizations in threshold type materials were attained by the annealing in some conditions, nevertheless the crystallization could not be detected by DTA. It is useful to study the crystallization of amorphous materials, because the crystalline phases due to annealing would reflect the original amorphous structures. From the studies of the crystallization, it is concluded that the translational order does not exist in both types and the compositional order would not exist in threshold type but would exist in memory type materials. |
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| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
