| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2022-01-24 |
| タイトル |
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タイトル |
Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy films |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| ID登録 |
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|
ID登録 |
10.24517/00064709 |
|
ID登録タイプ |
JaLC |
| 著者 |
Xu, Xixiang
Okumura, Akihisa
Morimoto, Akiharu
Kumeda, Minoru
Shimizu, Tatsuo
|
| 著者別表示 |
森本, 章治
久米田, 稔
清水, 立生
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| 提供者所属 |
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内容記述タイプ |
Other |
|
内容記述 |
金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 |
| 書誌情報 |
Physical Review B
巻 38,
号 12,
p. 8371-8376,
発行日 1988
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| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0021-8979 |
| ISSN |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
1089-7550 |
| NCID |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00693547 |
| DOI |
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関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/PhysRevB.38.8371 |
| 出版者 |
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出版者 |
American Physical Society |
| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Thermally induced metastable defects in hydrogenated amorphous silicon (a-Si:H) and silicon-carbon alloy (a-Si1-xCx:H) films are studied by electron spin resonance (ESR) and conductivity measurements. We found that both undoped and P-doped a-Si1-xCx:H films exhibit thermal-equilibrium phenomena similar to those in a-Si:H although they have much higher defect densities. By heating the samples in situ during ESR measurements, we were able to directly observe the density of dangling bonds in both a-Si:H and a-Si1-xCx:H as the samples move from a frozen-in state into a temperature-dependent equilibrium. The influence of surface states and long-term drift of exposed surface on the thermal-equilibrium process has also been extensively investigated. © 1988 The American Physical Society. |
| 権利 |
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|
権利情報 |
Copyright © American Physical Society |
| 著者版フラグ |
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出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連URI |
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識別子タイプ |
URI |
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関連識別子 |
http://jap.aip.org/ |
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関連名称 |
http://jap.aip.org/ |
TE-PR-MORIMOTO-A-38.8371.pdf (311.2 kB)
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