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Kinetics of solid phase interaction between Al and a‐Si:H
http://hdl.handle.net/2297/24217
http://hdl.handle.net/2297/24217a0418c82-e668-47ad-b3b5-0cc1188f0189
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MASAKI-Y-5225.pdf (459.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Kinetics of solid phase interaction between Al and a‐Si:H | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Masaki, Yuichi
× Masaki, Yuichi× Ogata, Toshihiro× Ogawa, Hiroshi× Jones, David I. |
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| 提供者所属 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 金沢大学工学部 | |||||
| 書誌情報 |
Journal of Applied Physics 巻 76, 号 9, p. 5225-5231, 発行日 1994-11-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.357172 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The kinetics of solid phase interaction between Al and a‐Si:H have been investigated. The experiment led to the observation of low‐temperature crystallization as has been reported. The crystallization temperature was found to be 300–350 °C from diffraction studies. From the x‐ray photoelectron spectroscopy study, electron transfer from Al to Si was observed in the intermixing layer in samples annealed at RT and 200 °C whereas there is no evidence of the electron transfer for 300 and 350 °C annealed samples. To explain these results, a comparison is made with the interaction in the Cr/a‐Si:H system previously reported and the interdiffusion model is proposed. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
