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GaInAsP/InP membrane lasers for optical interconnects
http://hdl.handle.net/2297/29705
http://hdl.handle.net/2297/29705c04e102c-84e6-4ee6-a775-5fe88a748d39
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MARUYAMA-T-1381.pdf (942.1 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | GaInAsP/InP membrane lasers for optical interconnects | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Arai, Shigehisa
× Arai, Shigehisa× Nishiyama, Nobuhiko× Maruyama, Takeo× Okumura, Tadashi |
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| 書誌情報 |
IEEE Journal on Selected Topics in Quantum Electronics 巻 17, 号 5, p. 1381-1389, 発行日 2011-01-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1077-260X | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA11036333 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/JSTQE.2011.2128859 | |||||
| 出版者 | ||||||
| 出版者 | IEEE | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In this paper, the state-of-the art of long-wavelength GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light sources for optical interconnects and on-chip optical wiring between large-scale integrated circuits, is described. After an extensive review of research activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of our recent research activities on low power consumption lasers are presented. Specifically, our interest was set on the low-damage fabrication of strongly index-coupled grating, which is generally opted forDFB and distributed reflector (DR) lasers consisting of wire-like active regions, as well as of high index-contrast membrane waveguides. A submilliampere threshold current and a differential quantum efficiency close to 50 from the front facet were achieved in the case of the DR laser. On the other hand, a lateral current injection (LCI) structure, which can be combined with the membrane laser, was adopted for the realization of an injection-type membrane laser. The successful continuous wave operation of LCI lasers, prepared on a semiinsulating InP substrate, was achieved with moderately low threshold current at room temperature. © 2011 IEEE. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| シリーズ | ||||||
| 関連名称 | 5753909 | |||||
