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Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation
https://doi.org/10.24517/00009197
https://doi.org/10.24517/000091978d905422-5675-45f8-9249-b7a7c078f609
| 名前 / ファイル | ライセンス | アクション |
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TE-PR-IIYAMA-K-1304-final.pdf (701.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2017-10-03 | |||||||||
| タイトル | ||||||||||
| タイトル | Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00009197 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Napiah, Zul Atfyi Fauzan Mohammed
× Napiah, Zul Atfyi Fauzan Mohammed× Gyobu, Ryoichi× Hishiki, Takuya× Maruyama, Takeo× Iiyama, Koichi |
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| 著者別表示 |
丸山, 武男
× 丸山, 武男
× 飯山, 宏一
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| 書誌情報 |
IEICE Transactions on Electronics 巻 E99.C, 号 12, p. 1304-1311, 発行日 2016-12-01 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0916-8524 | |||||||||
| NCID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA10826283 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1587/transele.E99.C.1304 | |||||||||
| 出版者 | ||||||||||
| 出版者 | IEICE 電子情報通信学会 | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | nMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84µm, the detection area of 10×10µm2, the PAD size for RF probing of 30×30µm2, and with the guard ring structure. The maximum bandwidth of 8.4GHz was achieved along with the gain-bandwidth product of 280GHz. | |||||||||
| 権利 | ||||||||||
| 権利情報 | Copyright © 2016 The Institute of Electronics, Information and Communication Engineers 電子情報通信学会 | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 関連URI | ||||||||||
| 識別子タイプ | URI | |||||||||
| 関連識別子 | https://www.jstage.jst.go.jp/browse/transele | |||||||||
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| 識別子タイプ | URI | |||||||||
| 関連識別子 | http://www.ieice.org/jpn/ | |||||||||
