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Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation
https://doi.org/10.24517/00009421
https://doi.org/10.24517/00009421f78eab05-304d-4950-b58b-ec83b6bc068f
| 名前 / ファイル | ライセンス | アクション |
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TE-PR-IIYAMA-K-99.pdf (502.3 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2017-10-03 | |||||||||
| タイトル | ||||||||||
| タイトル | Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00009421 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Zul, Atfyi Fauzan M. N.
× Zul, Atfyi Fauzan M. N.× Iiyama, Koichi× Gyobu, Ryoichi× Hishiki, Takuya× Maruyama, Takeo |
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| 著者別表示 |
飯山, 宏一
× 飯山, 宏一
× 丸山, 武男
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| 書誌情報 |
2015 International Conference on Telematics and Future Generation Networks, TAFGEN 2015 号 7289585, p. 99-102, 発行日 2015-10-05 |
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| ISBN | ||||||||||
| 識別子タイプ | ISBN | |||||||||
| 関連識別子 | 978-147997315-6 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isVersionOf | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1109/TAFGEN.2015.7289585 | |||||||||
| 出版者 | ||||||||||
| 出版者 | Institute of Electrical and Electronics Engineers Inc. | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Silicon avalanche photodiode (APD) was fabricated by standard 0.18 μm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast lower in responsivity. To enhance the bandwidth, the detection area and the PAD size for RF probing are optimized to 10 × 10 μm2 and 30 × 30 μm2, respectively, to decrease the device capacitance, the spacing of interdigital electrode is narrowed to 0.84 μm to decrease carrier transit time, and by cancelling the carriers photo-generated in the deep layer and the substrate because the carriers are slow diffusion carriers. As a result, the maximum bandwidth of 8 GHz was achieved along with a gain-bandwidth product of 280 GHz. © 2015 IEEE. | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
