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Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics
https://doi.org/10.24517/00009580
https://doi.org/10.24517/00009580ac8bdc55-1da7-4789-8b83-c73b804cc052
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MATSUMOTO-T-31585.pdf (665.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
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| 公開日 | 2017-10-03 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| ID登録 | ||||||||||||||
| ID登録 | 10.24517/00009580 | |||||||||||||
| ID登録タイプ | JaLC | |||||||||||||
| 著者 |
Matsumoto, Tsubasa
× Matsumoto, Tsubasa× Kato, Hiromitsu× Oyama, Kazuhiro× Makino, Toshiharu× Ogura, Masahiko× Takeuchi, Daisuke× Inokuma, Takao× Tokuda, Norio× Yamasaki, Satoshi |
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| 著者別表示 |
松本, 翼
× 松本, 翼
× 猪熊, 孝夫
× 德田, 規夫
× 山﨑, 聡
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| 提供者所属 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | 金沢大学ナノマテリアル研究所 | |||||||||||||
| 書誌情報 |
Scientific Reports 巻 6, p. 31585, 発行日 2016-08-22 |
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| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 2045-2322 | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | 10.1038/srep31585 | |||||||||||||
| 出版者 | ||||||||||||||
| 出版者 | Nature Publishing Group | |||||||||||||
| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. © The Author(s) 2016. | |||||||||||||
| 著者版フラグ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
