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Fluorine-incorporation scheme in fluorinated amorphous silicon prepared by various methods.
http://hdl.handle.net/2297/24481
http://hdl.handle.net/2297/24481855c5dc8-7407-4dee-b44f-e46257bfb44d
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-1987-KUMEDA-M-2713.pdf (1.1 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Fluorine-incorporation scheme in fluorinated amorphous silicon prepared by various methods. | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Kumeda, Minoru
× Kumeda, Minoru× Takahashi, Yukio× Shimizu, Tatsuo |
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| 書誌情報 |
Physical Review -Series B- 巻 36, 号 5, p. 2713-2719, 発行日 1987-01-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1098-0121 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA11289372 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1103/PhysRevB.36.2713 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Fluorinated amorphous silicon (a-Si:F) films are prepared by three different methods: glow-discharge decomposition of SiF2 gas, magnetron sputtering, and conventional diode sputtering. The incorporation scheme of F atoms is investigated by means of nuclear magnetic resonance (NMR) and infrared (ir) absorption measurements. 19F NMR signals observed at 4.2 K can be simulated by superposing signals from dispersed F atoms, clustered F atoms, SiF4 molecules, and SiF3 species. The content of SiF4 increases by annealing in agreement with an increase in the intensity of ir absorption at 1020 cm-1. 19F NMR signals at 77 K and at room temperature show the effect of motional narrowing because SiF4 molecules move easily in the amorphous network. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
