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Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen
https://doi.org/10.24517/00010032
https://doi.org/10.24517/0001003257490b13-1630-4314-b81a-263fd5819111
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-1990-MORIMOTO-A-10049.pdf (1.5 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2017-10-03 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| ID登録 | ||||||||||||
| ID登録 | 10.24517/00010032 | |||||||||||
| ID登録タイプ | JaLC | |||||||||||
| 著者 |
Xu, Xixiang
× Xu, Xixiang× Sasaki, Hiroyuki× Morimoto, Akiharu× Kumeda, Minoru× Shimizu, Tatsuo |
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| 著者別表示 |
森本, 章治
× 森本, 章治
× 久米田, 稔
× 清水, 立生
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| 提供者所属 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部 | |||||||||||
| 書誌情報 |
Physical Review -Series B- 巻 41, 号 14, p. 10049-10057, 発行日 1990-05-01 |
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| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 1098-0121 | |||||||||||
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| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA11289372 | |||||||||||
| DOI | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | 10.1103/PhysRevB.41.10049 | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Physical Society | |||||||||||
| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Temperature dependence of the thermal-equilibrium defect density in undoped a-Si:H, a-Si1-xCx:H, and a-Si1-xNx:H is obtained both by in situ electron-spin-resonance (ESR) measurements at elevated temperatures and by ESR measurements of frozen-in defects at room temperature. The experimental results confirm that the defects in these alloy films, even for films with the defect density as high as 1017 cm-3, can reach thermal equilibrium above a certain temperature (200350°C). Thickness dependence of the defect density after various thermal treatments shows that only the bulk defect density increases with temperature, with the exception that thin a-Si:H films (<1 m) exhibit some extra increase. Results of ESR, light-induced ESR (LESR), and constant-photocurrent method (CPM) measurements indicate that the charged-defect density in these films does not appreciably increase with temperature. Relaxation of the frozen-in defect density follows a stretched exponential form and the relaxation time increases with the defect density in these alloys. © 1990 The American Physical Society. | |||||||||||
| 著者版フラグ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 関連URI | ||||||||||||
| 識別子タイプ | URI | |||||||||||
| 関連識別子 | http://www.scopus.com/record/display.url?eid=2-s2.0-0042911196&origin=resultslist&sort=plf-f&src=s&sid=F6hms6Cj5qviMqR7MtfaNW6%3a110&sot=q&sdt=b&sl=90&s=TITLE-ABS-KEY-AUTH%28Thermal-equilibrium+defects+in+undoped+hydrogenated+amorphous+silicon%2c%29&relpos=8&relpos=8 | |||||||||||
