| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2017-10-03 |
| タイトル |
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タイトル |
Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| ID登録 |
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ID登録 |
10.24517/00010032 |
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ID登録タイプ |
JaLC |
| 著者 |
Xu, Xixiang
Sasaki, Hiroyuki
Morimoto, Akiharu
Kumeda, Minoru
Shimizu, Tatsuo
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| 著者別表示 |
森本, 章治
久米田, 稔
清水, 立生
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| 提供者所属 |
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内容記述タイプ |
Other |
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内容記述 |
金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部 |
| 書誌情報 |
Physical Review -Series B-
巻 41,
号 14,
p. 10049-10057,
発行日 1990-05-01
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| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1098-0121 |
| NCID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA11289372 |
| DOI |
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関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/PhysRevB.41.10049 |
| 出版者 |
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出版者 |
American Physical Society |
| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Temperature dependence of the thermal-equilibrium defect density in undoped a-Si:H, a-Si1-xCx:H, and a-Si1-xNx:H is obtained both by in situ electron-spin-resonance (ESR) measurements at elevated temperatures and by ESR measurements of frozen-in defects at room temperature. The experimental results confirm that the defects in these alloy films, even for films with the defect density as high as 1017 cm-3, can reach thermal equilibrium above a certain temperature (200350°C). Thickness dependence of the defect density after various thermal treatments shows that only the bulk defect density increases with temperature, with the exception that thin a-Si:H films (<1 m) exhibit some extra increase. Results of ESR, light-induced ESR (LESR), and constant-photocurrent method (CPM) measurements indicate that the charged-defect density in these films does not appreciably increase with temperature. Relaxation of the frozen-in defect density follows a stretched exponential form and the relaxation time increases with the defect density in these alloys. © 1990 The American Physical Society. |
| 著者版フラグ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連URI |
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識別子タイプ |
URI |
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関連識別子 |
http://www.scopus.com/record/display.url?eid=2-s2.0-0042911196&origin=resultslist&sort=plf-f&src=s&sid=F6hms6Cj5qviMqR7MtfaNW6%3a110&sot=q&sdt=b&sl=90&s=TITLE-ABS-KEY-AUTH%28Thermal-equilibrium+defects+in+undoped+hydrogenated+amorphous+silicon%2c%29&relpos=8&relpos=8 |
TE-PR-1990-MORIMOTO-A-10049.pdf (1.5 MB)
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