| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2022-01-13 |
| タイトル |
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|
タイトル |
Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| ID登録 |
|
|
ID登録 |
10.24517/00064702 |
|
ID登録タイプ |
JaLC |
| 著者 |
Masuda, Atsushi
Morimoto, Akiharu
Kumeda, Minoru
Shimizu, Tatsuo
Yonezawa, Yasuto
Minamikawa, Toshiharu
|
| 著者別表示 |
森本, 章治
久米田, 稔
清水, 立生
|
| 提供者所属 |
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|
内容記述タイプ |
Other |
|
内容記述 |
金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 |
| 書誌情報 |
Applied Physics Letters
巻 61,
号 7,
p. 816-818,
発行日 1992
|
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0003-6951 |
| ISSN |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
1077-3118 |
| NCID |
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|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00543431 |
| DOI |
|
|
関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/1.107754 |
| 出版者 |
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出版者 |
American Institute of Physics |
| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) using nitrous oxide (N2O) plasma was studied in detail for the first time. The N2O-plasma oxidized a-Si:H has an excellent interface whose interfacial defect density is largely reduced compared with the O 2-plasma oxidized a-Si:H. It was elucidated that this oxide layer has almost stoichiometric composition and contains a small amount of N piling up at the interface between the oxide layer and a-Si:H layer. It also turned out that this process has less ion damage than the O2-plasma oxidation process. The reason for the reduction of the interfacial defect density is attributed to the presence of N at the interface and/or less ion damage in this process. |
| 権利 |
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|
権利情報 |
Copyright © American Institute of Physics |
| 著者版フラグ |
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|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連URI |
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|
識別子タイプ |
URI |
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関連識別子 |
http://apl.aip.org/ |
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|
関連名称 |
http://apl.aip.org/ |
TE-PR-MORIMOTO-A-816.pdf (654.4 kB)
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