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Influence of interfacial neighborhood on residual stress due to deposition of TiN thin films made by PVD
http://hdl.handle.net/2297/7401
http://hdl.handle.net/2297/74016db53e35-1de0-4124-85c5-df3b23e1f874
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-GOTOH-M-601.pdf (275.3 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Influence of interfacial neighborhood on residual stress due to deposition of TiN thin films made by PVD | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Hirose, Hajime
× Hirose, Hajime× Suzuki, Shinya× Goto, Masahide× Sasaki, Toshihiko |
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| 提供者所属 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 金沢大学大学院自然科学研究科システム創成科学専攻 | |||||
| 書誌情報 |
Materials Science Forum 巻 490-491, p. 601-606, 発行日 2005-01-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0255-5476 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA10695957 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.4028/www.scientific.net/MSF.490-491.601 | |||||
| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
