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Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process
https://doi.org/10.24517/00007638
https://doi.org/10.24517/0000763879840102-5875-4bd6-84a2-4d509dff036e
| 名前 / ファイル | ライセンス | アクション |
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01097899.pdf (624.9 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||
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| 公開日 | 2017-10-03 | |||||||
| タイトル | ||||||||
| タイトル | Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process | |||||||
| 言語 | ||||||||
| 言語 | eng | |||||||
| 資源タイプ | ||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
| 資源タイプ | journal article | |||||||
| ID登録 | ||||||||
| ID登録 | 10.24517/00007638 | |||||||
| ID登録タイプ | JaLC | |||||||
| 著者 |
Iiyama, Koichi
× Iiyama, Koichi× Kita, Yukihiro× Ohta, Yosuke× Nasuno, Masaaki× Takamiya, Saburo× Higashimine, Koichi× Ohtsuka, Nobuo |
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| 著者別表示 |
飯山, 宏一
× 飯山, 宏一
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| 提供者所属 | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | 金沢大学工学部 | |||||||
| 書誌情報 |
IEEE Transactions on Electron Devices 巻 49, 号 11, p. 1856-1862, 発行日 2002-11-01 |
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| ISSN | ||||||||
| 収録物識別子タイプ | ISSN | |||||||
| 収録物識別子 | 0018-9383 | |||||||
| DOI | ||||||||
| 関連タイプ | isIdenticalTo | |||||||
| 識別子タイプ | DOI | |||||||
| 関連識別子 | https://doi.org/10.1109/ted.2002.804720 | |||||||
| 出版者 | ||||||||
| 出版者 | IEEE | |||||||
| 抄録 | ||||||||
| 内容記述タイプ | Abstract | |||||||
| 内容記述 | A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describe the fabrication and characterization of GaAs MISFETs with a nm-thin oxidized layer as the gate insulating layer, which is formed by an ultraviolet (UV) and ozone process. The UV and ozone process forms oxidized GaAs layers near the surface, which effectively suppress the reverse leakage current by several orders of magnitude. The fabricated GaAs MISFET can operate not only in the depletion mode, but also in the accumulation mode up to 3 V gate voltage for 8-nm-thick oxidized layers due to the current blocking effect of the oxidized layer. A current cutoff frequency of 6 GHz and a maximum oscillation frequency of 8 GHz are obtained for a GaAs MISFET with 1-/spl mu/m gate length and 8-nm-thick oxidized layers. | |||||||
| 権利 | ||||||||
| 権利情報 | Copyright ©2002 IEEE.. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..IEEE Transactions on Electron Devices,49(11),pp.1856-1862 | |||||||
| 著者版フラグ | ||||||||
| 出版タイプ | VoR | |||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||
