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GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces
https://doi.org/10.24517/00007725
https://doi.org/10.24517/00007725245dbf94-21f0-4ca0-abd8-497a1c04ca42
| 名前 / ファイル | ライセンス | アクション |
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01268252.pdf (374.1 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||
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| 公開日 | 2017-10-03 | |||||||
| タイトル | ||||||||
| タイトル | GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces | |||||||
| 言語 | ||||||||
| 言語 | eng | |||||||
| 資源タイプ | ||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
| 資源タイプ | journal article | |||||||
| ID登録 | ||||||||
| ID登録 | 10.24517/00007725 | |||||||
| ID登録タイプ | JaLC | |||||||
| 著者 |
Takebe, Masahide
× Takebe, Masahide× Nakamura, Kazuki× Paul, Narayan Chandra× Iiyama, Koichi× Takamiya, Saburo |
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| 著者別表示 |
飯山, 宏一
× 飯山, 宏一
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| 提供者所属 | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | 金沢大学工学部 | |||||||
| 書誌情報 |
IEEE Transactions on Electron Devices 巻 51, 号 3, p. 311-316, 発行日 2004-03-01 |
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| ISSN | ||||||||
| 収録物識別子タイプ | ISSN | |||||||
| 収録物識別子 | 0018-9383 | |||||||
| DOI | ||||||||
| 関連タイプ | isIdenticalTo | |||||||
| 識別子タイプ | DOI | |||||||
| 関連識別子 | https://doi.org/10.1109/ted.2003.823049 | |||||||
| 出版者 | ||||||||
| 出版者 | IEEE | |||||||
| 抄録 | ||||||||
| 内容記述タイプ | Abstract | |||||||
| 内容記述 | Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma nitridation after oxidation) of GaAs surfaces were used to form nanometer-scale gate insulating layers for depletion-type recessed gate GaAs-MISFETs. The drain current-drain voltage characteristics of the oxide gate devices exhibit lower transconductance (max. 40 mS/mm), lower breakdown voltage and smaller gate capacitance than the oxinitrided gate devices. The presence of hysteresis in the oxide gate devices is also apparent. The maximum transconductance of the oxinitrided gate devices is 110 mS/mm and they have a sharper pinch-off, compared to the oxide gate devices. In addition, no hysteresis is observed in their current voltage curves. The current gain cutoff frequency of 1.4 μm gate-length FETs for both types is 6 GHz. These results correspond well with results obtained from characterization of these insulating films. | |||||||
| 権利 | ||||||||
| 権利情報 | Copyright © 2004 IEEE.. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..IEEE Transactions on Electron Devices,51(3),pp.311-316 | |||||||
| 著者版フラグ | ||||||||
| 出版タイプ | VoR | |||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||
