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{"_buckets": {"deposit": "b56db1d4-991f-4019-9f24-4cd38ffc4ec6"}, "_deposit": {"created_by": 3, "id": "7881", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "7881"}, "status": "published"}, "_oai": {"id": "oai:kanazawa-u.repo.nii.ac.jp:00007881", "sets": ["4187"]}, "author_link": ["2109", "305", "2051", "10807", "10808"], "item_4_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-01-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "511", "bibliographicPageStart": "510", "bibliographic_titles": [{"bibliographic_title": "European Conference on Optical Communication, ECOC"}]}]}, "item_4_creator_33": {"attribute_name": "著者別表示", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "飯山, 宏一"}], "nameIdentifiers": [{"nameIdentifier": "2109", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=90202837"}]}, {"creatorNames": [{"creatorName": "丸山, 武男"}], "nameIdentifiers": [{"nameIdentifier": "2051", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "60345379", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=60345379"}]}]}, "item_4_description_21": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "A Si APD was fabricated by standard 0.18 μm CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain. © VDE VERLAG GMBH.", "subitem_description_type": "Abstract"}]}, "item_4_description_5": {"attribute_name": "提供者所属", "attribute_value_mlt": [{"subitem_description": "金沢大学理工研究域電子情報学系", "subitem_description_type": "Other"}]}, "item_4_identifier_registration": {"attribute_name": "ID登録", "attribute_value_mlt": [{"subitem_identifier_reg_text": "10.24517/00007868", "subitem_identifier_reg_type": "JaLC"}]}, "item_4_publisher_17": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "European Conference on Optical Communication, ECOC / IEEE"}]}, "item_4_relation_10": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-142445096-1", "subitem_relation_type_select": "ISBN"}}]}, "item_4_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.7567/ssdm.2009.p-7-1", "subitem_relation_type_select": "DOI"}}]}, "item_4_version_type_25": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Iiyama, Koichi"}], "nameIdentifiers": [{"nameIdentifier": "305", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=90202837"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "金沢大学研究者情報", "nameIdentifierURI": "http://ridb.kanazawa-u.ac.jp/public/detail.php?kaken=90202837"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "研究者番号", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000090202837"}]}, {"creatorNames": [{"creatorName": "Takamatsu, Hideki"}], "nameIdentifiers": [{"nameIdentifier": "10807", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Maruyama, Takeo"}], "nameIdentifiers": [{"nameIdentifier": "10808", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "60345379", "nameIdentifierScheme": "金沢大学研究者情報", "nameIdentifierURI": "http://ridb.kanazawa-u.ac.jp/public/detail.php?kaken=60345379"}, {"nameIdentifier": "60345379", "nameIdentifierScheme": "研究者番号", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000060345379"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-10-03"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "TE-PR-IIYAMA-K-5287343.pdf", "filesize": [{"value": "318.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 318800.0, "url": {"label": "TE-PR-IIYAMA-K-5287343.pdf", "url": "https://kanazawa-u.repo.nii.ac.jp/record/7881/files/TE-PR-IIYAMA-K-5287343.pdf"}, "version_id": "82eec6c1-bc24-4f4f-ba9b-6821092b9438"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Avalanche gains", "subitem_subject_scheme": "Other"}, {"subitem_subject": "CMOS processs", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process"}]}, "item_type_id": "4", "owner": "3", "path": ["4187"], "permalink_uri": "https://doi.org/10.24517/00007868", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-10-03"}, "publish_date": "2017-10-03", "publish_status": "0", "recid": "7881", "relation": {}, "relation_version_is_last": true, "title": ["Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process"], "weko_shared_id": 3}
Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process
https://doi.org/10.24517/00007868
https://doi.org/10.24517/0000786897e3b457-2507-402e-85c7-4e9cbc0a0d17
名前 / ファイル | ライセンス | アクション |
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TE-PR-IIYAMA-K-5287343.pdf (318.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00007868 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Iiyama, Koichi
× Iiyama, Koichi× Takamatsu, Hideki× Maruyama, Takeo |
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著者別表示 |
飯山, 宏一
× 飯山, 宏一× 丸山, 武男 |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学理工研究域電子情報学系 | |||||
書誌情報 |
European Conference on Optical Communication, ECOC p. 510-511, 発行日 2009-01-01 |
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ISBN | ||||||
識別子タイプ | ISBN | |||||
関連識別子 | 978-142445096-1 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/ssdm.2009.p-7-1 | |||||
出版者 | ||||||
出版者 | European Conference on Optical Communication, ECOC / IEEE | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A Si APD was fabricated by standard 0.18 μm CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain. © VDE VERLAG GMBH. | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |