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10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process
https://doi.org/10.24517/00009144
https://doi.org/10.24517/00009144af7b2c4e-b3e7-46fc-92c8-1b293a871f8e
名前 / ファイル | ライセンス | アクション |
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TE-PR-IIYAMA-K-243.pdf (811.9 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | 10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00009144 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Iiyama, Koichi
× Iiyama, Koichi× Shimotori, Toshiyuki× Gyobu, Ryoichi× Hishiki, Takuya× Maruyama, Takeo |
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著者別表示 |
飯山, 宏一
× 飯山, 宏一× 丸山, 武男 |
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書誌情報 |
2014 OptoElectronics and Communication Conference, OECC 2014 and Australian Conference on Optical Fibre Technology, ACOFT 2014 p. 243-244, 発行日 2014-07-10 |
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出版者 | ||||||
出版者 | IEEE Computer Society | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/μm and the detection area of 10x10/μm2. © 2014 Engineers Australia. | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |