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Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing
https://doi.org/10.24517/00009024
https://doi.org/10.24517/0000902477fb0e5d-88b8-4fdc-84cb-cd4aa95a56a7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MORIMOTO-A-242.pdf (311.9 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2017-10-03 | |||||||||
| タイトル | ||||||||||
| タイトル | Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00009024 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Nakata, Shunji
× Nakata, Shunji× Kato, Takashi× Ozaki, Shinya× Kawae, Takeshi× Morimoto, Akiharu |
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| 著者別表示 |
川江, 健
× 川江, 健
× 森本, 章治
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| 提供者所属 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||||||
| 書誌情報 |
Thin Solid Films 巻 542, p. 242-245, 発行日 2013-09-02 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0040-6090 | |||||||||
| NCID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00863068 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isVersionOf | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1016/j.tsf.2013.06.005 | |||||||||
| 出版者 | ||||||||||
| 出版者 | Elsevier B.V. | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Thin film Al2O3/Al-rich Al2O 3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputtering was used to form Al-rich Al 2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O 3 layer. The charge trap density was estimated to be 42.7 × 1018 cm- 3, which is the largest value ever reported for an Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 C. © 2013 Elsevier B.V. All rights reserved. | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
| 関連URI | ||||||||||
| 識別子タイプ | URI | |||||||||
| 関連識別子 | http://www.elsevier.com/locate/issn/00406090 | |||||||||
